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Vo1 Vo1 Vdc 18 Vo1
Io1 Io1 A 0.35 Io1
Vo2 Vo2 Vdc 0 Vo2
Io2 Io2 A 0 Io2
Vo3 Vo3 Vdc 0 Vo3
Io3 Io3 A 0 Io3
Vo4 Vo4 Vdc 0 Vo4
Io4 Io4 A 0 Io4
Power Output Po W 6.30 =Vo*Io+Vob*Iob+D8*D9+D10*D11
Estimated Efficiency Eff - 70.00% Eff
Input power Pin W 9.00 =Po/Eff
High line Input voltage VinH Vac 220.0 VinH
Low line Input voltage VinL Vac 90.0 VinL
Rated input voltage VinR Vac 165.0 VinR
High line Vin peak Vpeak Vdc 311.1 =VinH*1.414
Low line Vin peak VLpeak Vdc 127.3 =VinL*1.414
Rated line Vin peak VRpeak Vdc 233.3 =VinL*1.414
Selected frequency f kHz 60 f
Duty max Dmax - 0.45 Dmax
Turn on Time Ton us 7.5 1000*Dmax/f
Turn off Time Toff us 9.2 1000*(1-Dmax)/f
Dead time Td uS 0.30 Td
Diode drop out voltage Vd V 1.00 Vd
Min turn ratio n Np/Ns 5.6655 =VLpeak*Dmax/((Vo+Vd)*(1-Dmax-Td*f*0.001))
Selected turn ration n(final) Np/Ns 0.1600
Derating factor Df 1.00
Max DC drain voltage - V 314.32 =Vpeak+n*(Vo+Vd)
Voltage spec of FET Vds V 180.00
Max sprike of snubber Vspike V -134.32 =Vds*Df-Vdrain
Output diode voltage peak - V 1843.00 =Vo+Vpeak/n
Voltage spec of Diode Vr V 600.00
Margin of diode voltage Vdspike V -1243.00 =Vr*Df-Vdiode
Duty max Dmax -
Duty minimium Dmin - 0.0095 =n*(Vd+Vo)*(1-Td*f*0.001)/(n*(Vd+Vo)+Vpeak)
Delta I maximium Ipeak A 0.3143 =2*Pin/(VLpeak*Dmax) 6.0885 2*Pin/(Vpeak*Dmin)
Max Inductance L uH 3036.5827 =Vpeak*Dmin/(f*Ipeak*0.001) 156.7625 Vlpeak*Dmax/(f*Ipeak*0.001)
Effective area of core Ae mm2 13.24 Ae
Effective magnetics path lenght le mm 111.00 le
Ferrite permeability u - 1650.00 u
Gap length lg mm 0.35 lg
Np suggested - 252.02 =SQRT(L*lg/(Ae*4*3.1416*0.0001))
Ns Suggested - 1575.12 =nN/n
Np Np - 15 Np
Ns Ns - 88 Ns
Actual turn ratio n - 0.17 =Np/Ns
Calculated inductance L uH 10.7573 =Ae*4*3.1416*Np*Np*0.0001/lg
Bmax Bmax T 0.0170 =Lo*Ipeak/(Np*Ae)
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计算高频变压器的具体参数必备条件:输入电压、输出电压电流、振荡频率、最大占空比、拓扑方式、工作效率、变压器规格等。